Recnik, A., Langjahr, P., & Ernst, F.(1997).Structural Characterization of SrZrO3/SrTiO3 Epitaxial Layers by HRTEM.Journal of Computer-Assisted Microscopy,9, 35–36.
Kienzle, O., Exner, M., & Ernst, F.(1997).Analysis of Interface Structures by Quantitative High-Resolution Transmission Electron Microscopy.,466, 95-106.
Ernst, F.(1997).Interface Dislocations Forming in GeSi Layers During Epitaxy on {111} Si Substrates at High Temperatures.Materials Science and Engineering A,233, 126–138.
Klement, U., Horst, D., & Ernst, F.(1997).Microstructure of Thin Film Photoconductors and its Correlation with Optical and Electronic Properties.,452, 925–930.
Kienzle, O., & Ernst, F.(1997).Effect of Shear Stress on the Atomistic Structure of a Grain Boundary in Strontium Titanate.Journal of the American Ceramic Society,80, 1639–1644.
Schweinfest, R., Gemming, T., Kopold, P., Ernst, F., & Rühle, M.(1997).Measurement of Tridentate Astigmatism of a Conventional HRTEM and a high-vacuum HRTEM.European Journal of Cell Biology,74, 78-78.
Ernst, F., & Rühle, M.(1997).Present Developments in High-Resolution Transmission Electron Microscopy.Current Opinion in Solid State & Material Science,2, 469-476.
Nadarzinski, K., Kienzle, O., & Ernst, F.(1997).Analysis of Interface Structures by Quantitative High-Resolution Transmission Electron Microscopy.San Francisco Press Inc..
Lyutovich, K., Ernst, F., Banhart, F., Silier, I., Gutjahr, A., & Konuma, M.(1997).Defect Distribution in Compositionally-Graded EpitaxialSiGeLayers on Si Substrates.Inst. Phys. Conf. Ser.,157, 131–134.
Ernst, F., Hofmann, D., Nadarzinski, K., Stemmer, S., & Streiffer, S.(1996).Quantitative High-Resolution Electron Microscopy of Interfaces.Transtec Publications Ltd..
